Instability of Si—F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques
- 1 May 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 278 (1-2) , 28-31
- https://doi.org/10.1016/0040-6090(95)08116-x
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Future trends for interlayer dielectric films and their formation technologies in ULSI multilevel interconnectionsMaterials Chemistry and Physics, 1995
- Fluorinated interlayer dielectric films in ULSI multilevel interconnectionsJournal of Non-Crystalline Solids, 1995
- Properties of liquid-phase-deposited SiO2 films for interlayer dielectrics in ultralarge-scale integrated circuit multilevel interconnectionsThin Solid Films, 1994
- Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon OxideJapanese Journal of Applied Physics, 1994
- A Selective SiO2 Film‐Formation Technology Using Liquid‐Phase Deposition for Fully Planarized Multilevel InterconnectionsJournal of the Electrochemical Society, 1993
- A Spin‐on‐Glass Film Treatment Technology Using a Fluoroalkoxysilane Vapor at Room TemperatureJournal of the Electrochemical Society, 1993
- A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel InterconnectionsJournal of the Electrochemical Society, 1993
- SiO2 Film Stress—Thickness Dependence, Non‐Planar Oxidation, and Fluorine‐Related EffectsJournal of the Electrochemical Society, 1992
- Fabrication of fluorine-doped silica glasses by the sol-gel methodJournal of Non-Crystalline Solids, 1988