Single-electron effects in heavily doped polycrystalline silicon nanowires
Open Access
- 24 August 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (8) , 1113-1115
- https://doi.org/10.1063/1.122101
Abstract
We have observed single-electron charging effects in heavily dopedpolycrystallinesiliconnanowires at 4.2 K. Wires of approximately 20 nm by 30 nm active cross section were defined by electron-beam lithography and thermal oxidation in standard polycrystallinesilicon material. We have measured a Coulomb staircase and periodic current oscillations with gate bias, attributed to localized carrier confinement resulting from a statistical variation in the intergrain tunnel barriers. A sharp change in the current oscillation period is seen and we speculate that it is due to electrostatic screening of the gate bias by grain boundary defect states.Keywords
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