Growth and modeling of highly doped, thin-layer silicon-modulation-doped superlattices by intermittent solid-phase epitaxy
- 15 October 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (8) , 3190-3194
- https://doi.org/10.1063/1.339344
Abstract
Earlier results determined the diffusion coefficients of Ga in both amorphous and crystalline silicon. Computer modeling shows that growth of silicon n-i-p-i superlattices with high doping and narrow layer width by either conventional molecular-beam epitaxy or solid-phase epitaxy leads to smearing of the Ga profile because of its relatively large diffusion coefficients in both the amorphous and crystalline states. A method of sequential amorphous deposition and crystallization is presented that minimizes the Ga diffusion. Superlattices with Ga and Sb doping of ≊5×1018 cm−3 and layer thickness of ≊25 nm are shown. The crystal surface after all regrowths produces very sharp low-energy electron diffraction patterns, and Auger electron spectroscopy shows the numerous growth interfaces to be clean to better than 1% of a monolayer of O or C.This publication has 16 references indexed in Scilit:
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