Electron diffraction and infrared study of the semimetallic layered compound Ti1−xVxSe2
- 30 September 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 35 (12) , 925-929
- https://doi.org/10.1016/0038-1098(80)90990-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Angle-resolved photoemission studies of the band structure of Tiand TiPhysical Review B, 1980
- Lattice dynamics of TiPhysical Review B, 1979
- Electrical resistivity and Hall effect in TiSe2containing vanadium impuritiesJournal of Physics C: Solid State Physics, 1979
- Negative magnetoresistance and nonlinear conduction in Ti0.99V0.01Se2Solid State Communications, 1979
- Infra-red studies of TiSe2: IR phonons and free carriersPhilosophical Magazine Part B, 1979
- Transport properties and the phase transition inPhysical Review B, 1978
- Band structure and lattice instability of TiPhysical Review B, 1978
- Ti: Semiconductor, semimetal, or excitonic insulatorPhysical Review B, 1978
- Raman and infrared studies of superlattice formation in TiPhysical Review B, 1977
- Electronic properties and superlattice formation in the semimetalPhysical Review B, 1976