Efficiency shift in very high efficiency GaP (Zn–O) diodes
- 15 September 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (6) , 257-260
- https://doi.org/10.1063/1.1654368
Abstract
High‐efficiency GaP (Zn–O) diodes have been observed, in some instances, to show a substantial and permanent increase in efficiency when subjected to a large forward bias. Experiments suggest that the effect is related to precipitation in the n and p layers. A model is presented which is able to account for most of the observations.Keywords
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