A new threshold voltage model for deep-submicron MOSFET's with nonuniform substrate dopings
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A simple but accurate threshold voltage model for deep-submicron MOSFET's with nonuniform dopings is described in this paper. A simplified quasi-delta substrate doping profile is used to approximate the nonuniformity. We apply a hyperbola function to avoid the discontinuous problem at the boundary between different doping regions. By adjusting the parameter /spl delta/, the actual gradual doping profile can be obtained. The model developed is in good agreement with two-dimensional numerical simulation.Keywords
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