Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method

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Abstract
The compositional and structural properties of silicon oxynitride (SiON) films prepared by an electron cyclotron resonance (ECR) plasma CVD method have been studied using the gas mixture of SiH4-N2-O2. The concentrations of oxygen and nitrogen incorporated in the films were found to be well controlled by varying the ration of O2/(N2+O2) under a constant microwave power, gas pressure and SiH4 flow rate. Bond configurations in the form of N-Si-O are thought to be incorporated in the films, judging from infrared absorption spectra. ESR centers relating to both Si dangling bonds and oxygen vacancy were detected in SiON films and silicon oxides (SiO) films, though only the ESR center relating to the Si dangling bonds is detected in SiN films.