Carrier-induced optical nonlinear effects in semiconductor quantum well wire structure
- 1 December 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (11) , 7024-7032
- https://doi.org/10.1063/1.350367
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etchingApplied Physics Letters, 1991
- Formation of planar superlattice states in new grid-inserted quantum well structuresApplied Physics Letters, 1989
- Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum ConfinementPhysical Review Letters, 1989
- (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987
- Dynamic and spectral properties of semiconductor lasers with quantum-well and quantum-wire effectsSurface Science, 1986
- Theoretical Gain of Quantum-Well Wire LasersJapanese Journal of Applied Physics, 1985
- Quantum noise and dynamics in quantum well and quantum wire lasersApplied Physics Letters, 1984
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982