Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
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- 29 April 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (17) , 3207-3209
- https://doi.org/10.1063/1.1473701
Abstract
The gate leakage behavior in AlGaN/GaN heterostructure field-effect transistors was studied as a function of applied bias, temperature, and surface periphery. A surface hopping conduction mechanism with an activation energy of 0.21 eV is proposed for the gate–drain leakage for voltages that exceed pinchoff. The reverse breakdown voltage of the device exhibited a negative temperature coefficient of −0.11 V K−1, suggesting that a breakdown mechanism other than impact ionization, such as thermal runaway, may be responsible.Keywords
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