Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors
- 18 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (20) , 2562-2564
- https://doi.org/10.1063/1.121418
Abstract
We report on the studies of the impact ionization in AlGaN–GaN heterostructure field effect transistors in the temperature range 17–43 °C. The results show that the breakdown voltage and the characteristic electrical field Ei of the impact ionization have a positive temperature coefficient. The value of Ei at room temperature is estimated to be approximately 2.6 MV/cm, which agrees with recent theoretical prediction [J. Kolnik et al., J. Appl. Phys. 82, 726 (1997)].Keywords
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