GaN based heterostructure for high power devices

This publication has 18 references indexed in Scilit:

• Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
  Journal of Applied Physics, 1997
• Comparison of high field electron transport in GaN and GaAs
  Applied Physics Letters, 1997
• CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
  IEEE Electron Device Letters, 1996
• Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
  IEEE Electron Device Letters, 1996
• Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN
  Journal of Electronic Materials, 1996
• Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency
  Electronics Letters, 1996
• Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition
  Applied Physics Letters, 1995
• Monte Carlo simulation of electron transport in gallium nitride
  Journal of Applied Physics, 1993
• AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors
  IEEE Transactions on Electron Devices, 1990
• Monte Carlo calculation of the velocity-field relationship for gallium nitride
  Applied Physics Letters, 1975