Limits to normal incidence electroabsorption modulation in GaAs/(GaAl)As multiple quantum well diodes
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 7 (7) , 1101-1108
- https://doi.org/10.1109/50.29637
Abstract
No abstract availableKeywords
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