Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
- 1 September 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (9A) , L1209-1211
- https://doi.org/10.1143/jjap.33.l1209
Abstract
Nondoped polysilicon films are deposited at temperatures as low as 260°C by the catalytic chemical vapor deposition (cat-CVD) method using a silane and hydrogen gas mixture. Electrical properties such as the Hall mobility are investigated for various measuring temperatures. It is found that the Hall mobility depends on the hydrogen flow rates during deposition and is larger than 20 cm2/V·s, and that the barrier height at the grain boundary appears to be lower than the thermal activation energy at room temperature.Keywords
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