Implant redistribution in high-dose ion implanted and annealed silicon
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 48 (1-4) , 87-90
- https://doi.org/10.1080/00337578008209234
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The application of high-resolution Rutherford backscattering techniques to near-surface analysisNuclear Instruments and Methods, 1978
- The recrystallization of ion-implantedsilicon layersRadiation Effects, 1978
- Migration of ion-implanted krypton in silicon during annealJournal of Applied Physics, 1977
- The recrystallization of ion implanted silicon layers. I. Pb-Ion implanted siRadiation Effects, 1977