The recrystallization of ion-implantedsilicon layers
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 36 (1) , 73-82
- https://doi.org/10.1080/00337577808233173
Abstract
Rutherford backscattering and channeling (RBS) has been employed to investigate the annealing characteristics of ion-bombarded silicon for a wide range of implant species. The general recrystallization behaviour is that high levels of remnant disorder are observed for high-dose (typically > 1015 ions cm-2) implants of all species investigated, and transmission electron microscopy indicates the presence of a polycrystalline reordered layer in such cases. The magnitude of the remnant disorder (misorientation of grains with respect to the underlying bulk substrate) is observed to increase with both implant dose and original amorphous-layer thickness and to exhibit a slight implant-mass dependence. Although the recrystallization behaviour is qualitatively similar for all species studied, certain species (mainly those soluble in silicon) are found to influence the regrowth process at low implant concentrations. It is suggested that stress/strain effects, attributed to high implanted concentrations, play a major role in the inhibition of epitaxial silicon recrystallization but that species effects can become dominant at lower implant concentrations.Keywords
This publication has 15 references indexed in Scilit:
- Dose dependence of residual lattice disorder in ion-implanted and annealed siliconApplied Physics Letters, 1977
- The significance of ion implantation induced stress in siliconPhysics Letters A, 1977
- The recrystallization of ion implanted silicon layers. I. Pb-Ion implanted siRadiation Effects, 1977
- Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ionsPhysica Status Solidi (a), 1976
- Crystal orientation dependence of residual disorder in As−implanted SiApplied Physics Letters, 1975
- Study of the annealing behaviour of high dose implants in silicon and germanium crystalsRadiation Effects, 1975
- Annealing behaviour of silicon bombarded with 140 KeV Si++ionsRadiation Effects, 1975
- Electrical and backscattering measurements of arsenic implanted siliconApplied Physics A, 1974
- On the annealing of damage produced by copper ion implantation of silicon single crystalsRadiation Effects, 1974
- Electrical and electron microscopy observations on defects in ion implanted siliconRadiation Effects, 1971