The significance of ion implantation induced stress in silicon
- 7 March 1977
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 60 (4) , 330-332
- https://doi.org/10.1016/0375-9601(77)90116-5
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- X-ray study of lateral strains in ion-implanted siliconThe European Physical Journal A, 1973
- LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SIApplied Physics Letters, 1970