The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon
- 1 February 1976
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 132, 387-392
- https://doi.org/10.1016/0029-554x(76)90763-1
Abstract
No abstract availableKeywords
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