Crystal orientation dependence of residual disorder in As−implanted Si

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Abstract
MeV 4He+ channeling effect measurements combined with transmission electron microscopy (TEM) and Hall effect measurements were employed to study the orientation dependence of the amount of damage remaining after anneal of 200−keV As−implanted Si. The residual disorder after high−temperature annealing was found to depend upon the crystal orientation. For 〈111〉−oriented Si, anomalously high residual disorder was found in the dose region of 1015/cm2 by both the TEM and channeling measurements. Significantly less disorder was found in 〈100〉− and 〈110〉−oriented Si, the latter exhibiting essentially no residual disorder. The electrical activity of the implanted layer was consistent with the orientation dependence observed.