A sample holder for measurement and anodic oxidation of ion implanted silicon

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Abstract
A versatile sample holder for Hall effect and sheet resistivity measurements and for anodic oxidation of silicon has been developed. The main feature of the design is the use of a Teflon edge instead of a rubber or Viton seal for defining the area to be stripped. In this way very good sealing is obtained and severe problems in obtaining well defined etching areas are overcome. It is possible to etch areas from 1.25 mm diameter to 2 mm diameter with constant depth scale. Hall and sheet resistivity measurements can be performed without removing the sample from the holder.