Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs
- 4 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (1) , 85-87
- https://doi.org/10.1063/1.113083
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Applications of neutral impurity disordering in fabricating low-loss optical waveguides and integrated waveguide devicesOptical and Quantum Electronics, 1991
- Neutral Impurity Disordering of III-V Quantum well Structures for Optoelectronic IntegrationMRS Proceedings, 1991
- Reduction of the propagation losses in impurity disordered quantum well waveguidesElectronics Letters, 1990
- Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs SuperlatticesMRS Proceedings, 1989
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988
- Transmission Electron Microscopic Observation of Microdefects in Zn+-Implanted GaAsJapanese Journal of Applied Physics, 1985
- Effect of layer size on lattice distortion in strained-layer superlatticesApplied Physics Letters, 1984
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealingApplied Physics Letters, 1981
- Low-temperature redistribution of Cr in boron-implanted GaAs in the absence of encapsulant stressApplied Physics Letters, 1980