Frequency dependence of response of the D X center in AlGaAs and its influence on the determination of the band discontinuity of GaAs/AlGaAs heterojunctions

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Abstract
An analysis to simulate the apparent carrier profiles of n‐N heterojunctions obtained from capacitance‐voltage measurements is presented. The analysis takes into account the partial ionization and the frequency dependence of the response of deep donors, if any, present in the N material. In the case of GaAs/AlGaAs heterojunctions, the latter effect has not been included in the previous analyses but appears to be important since the reciprocal time constant of the Si‐related DX centers in AlGaAs at room temperature seems to be comparable to the frequency of the test signal (1 MHz) normally used for capacitance measurements.