High-contrast/low-voltage normally on InGaAs/AlGaAs asymmetric Fabry-Perot modulator
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (12) , 1104-1106
- https://doi.org/10.1109/68.118016
Abstract
An asymmetric Fabry-Perot cavity modulator is proposed with a 50-period In/sub 0.15/Ga/sub 0.85/As/Al/sub 0.30/Ga/sub 0.70/As strained-layer superlattice active layer. The back Bragg reflector consists of 25 periods of GaAs/AlAs layers while for the front reflector of the device the natural reflection of the air-semiconductor interface was used. Spectral measurements as a function of the applied reverse voltages showed a change in reflectivity from 33% for 0 V reverse bias to 5% for 7 V, at a wavelength of 969 nm. This gives a maximum contrast ratio of 8.3 dB and an insertion loss of 4.9 dB. For higher voltages applied across the device, the reflectivity increases again.<>Keywords
This publication has 12 references indexed in Scilit:
- GaAs/AlGaAs multiple-quantum-well vertical optical modulators on glass using the epitaxial lift-off techniqueOptics Letters, 1991
- Novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry–Perot cavity with unstrained InGaAs/InAlAs mirrorsApplied Physics Letters, 1991
- Electro-optical bistability in strained InxGa1−xAs/Al0.15Ga0.85As multiple quantum wellsApplied Physics Letters, 1990
- Electric field dependent photocurrent and electroreflectance spectra of InGaAs/AlGaAs multiple strained quantum well structuresApplied Physics Letters, 1990
- InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength rangeApplied Physics Letters, 1990
- Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry–Perot structuresApplied Physics Letters, 1990
- Surface-emitting microlasers for photonic switching and interchip connectionsOptical Engineering, 1990
- Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrorsIEEE Photonics Technology Letters, 1989
- Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1Electronics Letters, 1989
- Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wellsApplied Physics Letters, 1989