Resonance Raman scattering in InSb: Deformation potentials and interference effects at theE1gap

This paper presents a reevaluation of the optical-phonon deformation potential constants near the $E_1$ gap of InSb. The absolute values of the deformation potentials $d_1$,$0^5$ and $d_3$,$0^5$ are obtained from a measurement of the Raman efficiency for allowed LO-phonon scattering and a fit of previous uniaxial-stress experiments by using new ellipsometric data for the optical susceptibility. The signs of the deformation potentials are deduced from a study of the interference between the amplitudes for forbidden and allowed LO-Raman scattering. The values obtained are $d_1$,$0^5$=-16.2±4 eV and $d_3$,$0^5$=32.9±8 eV. The study of the interference also provides information about the relative weight of different sources of forbidden LO-Raman scattering.