The Genesis Process/sup TM/: a new SOI wafer fabrication method
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 1078621X,p. 163-164
- https://doi.org/10.1109/soi.1998.723162
Abstract
The Genesis Process includes a new cost-effective method to fabricate high-quality SOI wafers. The process comprises steps of implanting a donor wafer with hydrogen ions using plasma immersion ion implantation (PIII). The implantation generates an embrittled hydrogen-rich layer within the donor wafer. This donor wafer is then bonded to a handle substrate using a special plasma-activated bonding process. Unlike conventional high-temperature thermally-activated hydrogen splitting processes, the wafers are separated along and guided by the hydrogen embrittled layer through a room-temperature controlled cleave process (rT-CCP). This cleaving process transfers a single-crystal silicon layer from the donor wafer to the handle wafer. The rT-CCP process improves layer transfer quality over the conventional high-temperature thermal layer transfer method.Keywords
This publication has 2 references indexed in Scilit:
- Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantationApplied Physics Letters, 1997
- Silicon on insulator material technologyElectronics Letters, 1995