Track Effects and their Influence on Heavy Ion Energy Losses in Semiconductor Devices
- 1 January 1993
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Influence of nuclear track potentials in insulators on the emission of target Auger electronsPhysical Review Letters, 1992
- Theoretical prediction of the impact of Auger recombination on charge collection from an ion trackIEEE Transactions on Nuclear Science, 1991
- Reduction of secondary-electron yields by collective electric fields within metalsPhysical Review A, 1991
- Experimental investigation of thescaling law of fast-ion-produced secondary-electron emissionPhysical Review A, 1991
- Radial Energy Transfer Density Distribution around the Fast Ion Tracks in Silicon and GermaniumPhysica Status Solidi (b), 1990
- Charge collection in silicon for ions of different energy but same linear energy transfer (LET)IEEE Transactions on Nuclear Science, 1988
- The Stopping and Range of Ions in MatterPublished by Springer Nature ,1985
- A new method for calibrating the pulse-height defect in solid state detectorsNuclear Instruments and Methods, 1978
- An analysis of the causes of the pulse height defect and its mass dependence for heavy-ion silicon detectorsNuclear Instruments and Methods, 1973