A transmission electron microscopy study of optically annealed ohmic contacts to GaAs using a Zirconium Diboride diffusion barrier
- 31 December 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 5 (1) , 21-26
- https://doi.org/10.1016/0921-5107(89)90300-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Metal penetration and dopant redistribution beneath alloyed Ohmic contacts to n-GaAsJournal of Vacuum Science & Technology A, 1987
- TiB2 and ZrB2 diffusion barriers in GaAs Ohmic contact technologyJournal of Vacuum Science & Technology A, 1985
- Obtaining the specific contact resistance from transmission line model measurementsIEEE Electron Device Letters, 1982
- Characteristics of AuGeNi ohmic contacts to GaAsSolid-State Electronics, 1982