Effect of pressure on the electrical resistance of EuO
- 1 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (16) , 8891-8893
- https://doi.org/10.1103/physrevb.35.8891
Abstract
The electrical resistivity of EuO has been measured from room temperature to 70 K and at pressures up to 250 kbar. A semiconductor-to-semiconductor transition is observed around 140 kbar at room temperature, and the conduction remains activated with a narrow gap up to 250 kbar. The magnetic transition temperature is observed to rise rapidly with pressure below 100 kbar but to saturate near 200 K in the 100–250-kbar range.Keywords
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