Optical studies of the back-channel leakage in N-channel MOSFET on silicon-on-sapphire (SOS)
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (1) , 25-27
- https://doi.org/10.1063/1.88882
Abstract
Internal photoemission studies of the Si‐sapphire interface of N‐channel transistors fabricated on silicon‐on‐sapphire (SOS) indicate that the leakage current observed in such devices after exposure to ionizing radiation is due to holes trapped in the sapphire close to the silicon interface. These holes can be removed by recombination with electrons photoinjected into the sapphire from the silicon. The much smaller preirradiation N‐channel leakage cannot be removed by electron photoinjection and is therefore thought to have a different origin.Keywords
This publication has 4 references indexed in Scilit:
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- Investigation of Radiation Effects and Hardening Procedures for CMOS/SOSIEEE Transactions on Nuclear Science, 1975
- Transient Photocurrents in SOS StructuresIEEE Transactions on Nuclear Science, 1973
- Internal Photoemission Measurements in a Metal-Al2O3–Si SystemJournal of Applied Physics, 1971