Experimental Observation of Wannier Levels in Semi-Insulating Gallium Arsenide
- 15 February 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 5 (4) , 1479-1483
- https://doi.org/10.1103/physrevb.5.1479
Abstract
Optical absorption in an electric field has been of increased interest in recent years since Callaway predicted that the Wannier levels may be observable in direct-transition semiconductors such as GaAs. In this work, such levels have been observed for the first time and found to be in substantial agreement with the Callaway theory.Keywords
This publication has 9 references indexed in Scilit:
- Intrinsic Oscillatory Photoconductivity and the Band Structure of GaAsPhysical Review B, 1971
- Effect of a Uniform Electric Field upon the Optical Absorption of Semi-Insulating Gallium ArsenidePhysical Review B, 1968
- On the theory of the Franz-Keldysh effectJournal of Physics C: Solid State Physics, 1968
- Solvable Model of a Hydrogenic System in a Strong Electric Field: Application to Optical Absorption in SemiconductorsPhysical Review B, 1966
- Absorption Edge of GaAs and Its Dependence on Electric FieldPhysical Review Letters, 1966
- Optical absorption in an electric field in semi-insulating gallium arsenideJournal of Physics and Chemistry of Solids, 1965
- Measurement of Optical Absorption in an Electric FieldPhysical Review B, 1965
- Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in-Type GermaniumPhysical Review B, 1964
- Optical Absorption in an Electric FieldPhysical Review B, 1963