Temperature dependence of the dielectric function and the interband critical points of CdSe

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Abstract
The real and imaginary parts of the ordinary and extraordinary dielectric functions of CdSe have been investigated with a scanning rotating analyzer ellipsometer. Strong edge excitons and structure in the 4–5-eV region are observed. With the use of the second derivative versus frequency of these dielectric functions, a critical-point analysis of the observed structures and their temperature dependences has been performed. The obtained results are analyzed in terms of real and imaginary self-energies due to the electron-phonon interaction.