Mechanism of the chemical vapour deposition of Si3N4 films from SiH2Cl2 and NH3 under diffusion-controlled conditions
- 1 May 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 91 (3) , 251-256
- https://doi.org/10.1016/0040-6090(82)90114-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Thermodynamic evaluation of chemically vapour- deposited Si3N4 films prepared by nitradation of dichlorosilaneThin Solid Films, 1982
- Silicon Epitaxial Growth by Rotating Disk MethodJournal of the Electrochemical Society, 1972
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970
- Silicon Epitaxy from Mixtures of SiH4 and HClJournal of the Electrochemical Society, 1970