A new type of magnetic domain wall in nearly compensated Ga-substituted YIG

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Abstract
A special type of 180° domain wall which we call a ``compensation wall'' is observed in (111)-oriented wafers with the chemical composition Y3Fe5−tGatO12, where t≈1.3. The compensation wall aligns along the sites of magnetic compensation (Ms=0) normal to the lateral gradient of t and is distinguished from a regular Bloch wall by essentially three properties: (i) The location of the wall remains unchanged under varying external magnetic fields; (ii) the wall thickness depends strongly on the applied magnetic field; and (iii) the wall moves with changing temperature.