Collector-up AlGaAs/GaAs heterojunction bipolartransistorsusing oxidised AlAs for current confinement
- 15 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4) , 399-401
- https://doi.org/10.1049/el:19960261
Abstract
The authors describe a novel method for fabricating collector-up AlGaAs/GaAs heterojunction bipolar transistors. An AlAs layer is inserted into the emitter layer and is oxidised in water vapour at 450°C. The resulting AlAs-oxide serves as a current confining layer that constricts collector current flow to the intrinsic portion of the device. DC devices with typical current gains of 50 are observed.Keywords
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