Multi-quantum well GaInNAs/GaAs lasers with low threshold current density grown by MOCVD
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 192-193
- https://doi.org/10.1109/drc.1999.806368
Abstract
This paper reports a significant improvement in the performance of MOCVD-grown Ga(1-x)In/sub x/N/sub y/As/sub 1-y/GaAs lasers. Using a new MOCVD regrowth technique, multi-quantum well edge-emitting lasers with x=0.3 and y/spl sim/0.3-0.4% have been achieved, with lasing wavelengths in the 1.15-1.19 /spl mu/m regime and threshold current density as low as /spl sim/600-700 A/cm/sup 2/, which is the lowest for any MOCVD-grown devices. Ridge-waveguide lasers as well as planar broad stripe lasers defined by the selective lateral wet oxidation of an Al/sub 0.98/Ga/sub 0.02/As layer have been fabricated.Keywords
This publication has 2 references indexed in Scilit:
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