InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
- 17 February 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (7) , 868-870
- https://doi.org/10.1063/1.106490
Abstract
InAs p‐n diodes have been grown on GaAs and GaAs‐coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p=5×1016 cm−3) and Si (n=3×1016 cm−3) doping scheme. The diodes exhibited 77 K zero‐bias resistance area products of 2200 Ω cm2 for InAs/GaAs and 1500 Ω cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95 μm with Johnson noise limited detectivities D* of 7.0×1011 cm Hz1/2/W for InAs/GaAs and 5.8×1011 cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read‐out electronics.Keywords
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