Raman scattering and photoluminescence characterization of Ge/Si strained-layer superlattices grown by phase-locked epitaxy
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 548-552
- https://doi.org/10.1016/0169-4332(89)90120-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Zone-Folding Effects on Phonons in GaAs-AlAs SuperlatticesJapanese Journal of Applied Physics, 1985
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974
- Raman scattering in GeSi alloysSolid State Communications, 1973