Variable density high mobility two-dimensional electron and hole gases in a gated GaAs/AlxGa1−xAs heterostructure
- 11 October 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (15) , 2132-2134
- https://doi.org/10.1063/1.110563
Abstract
We have fabricated undoped GaAs/AlxGa1−xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self‐aligned contacting process. Densities for both electrons and holes ranging from n2D < 1010/cm2 to n2D ≳ 5 × 1011/cm2 are obtainable with mobilities comparable to those measured in high quality modulation‐doped heterojunctions.Keywords
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