Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing
- 14 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (20) , 2031-2033
- https://doi.org/10.1063/1.103008
Abstract
We apply time-resolved four-wave mixing as a novel tool to study resonant tunneling of carriers in semiconductor heterostructures. The polarization decay of excitons in a quantum well is much faster when the alignment of the electron levels in adjacent wells leads to resonant tunneling and subsequent scattering of the carriers.Keywords
This publication has 16 references indexed in Scilit:
- Quantum beats of excitons in quantum wellsPhysical Review Letters, 1990
- Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wellsPhysical Review B, 1989
- Resonantly enhanced electron tunneling rates in quantum wellsPhysical Review Letters, 1989
- Resonant and non-resonant tunneling in multi quantum well structuresSuperlattices and Microstructures, 1989
- Linear and nonlinear optical properties of semiconductor quantum wellsAdvances in Physics, 1989
- Tunneling escape rate of electrons from quantum well in double-barrier heterostructuresPhysical Review Letters, 1987
- Resonance-induced quenching of luminescence and reduction of tunneling time inmultiple-quantum-well structuresPhysical Review B, 1987
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Photon echoes from two-dimensional excitons in GaAs-AlGaAs quantum wellsApplied Physics Letters, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985