Comments, on 'Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes' (and reply)
- 1 February 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (2) , 132-133
- https://doi.org/10.1109/55.144982
Abstract
For the original article see ibid., vol.11, no.9, p.373-5 (1990). The commenters give reasons for the discrepancy between measured and calculated currents for quantum barrier varactors proposed in the above-titled paper, based on the well-known intervalley transfer phenomenon in direct Al/sub x/Ga/sub 1-x/As barriers. Suggestions for improving the Q of the varactors are also included. In their reply, the authors acknowledge the importance of the lowering of the barrier height and briefly discuss some subsequent work.<>Keywords
This publication has 5 references indexed in Scilit:
- Model of Γ to X transition in thermally activated tunnel currents across AlxGa1−xAs single barriersJournal of Applied Physics, 1991
- Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodesIEEE Electron Device Letters, 1990
- Tunneling through AlAs barriers: Γ–X transfer currentApplied Physics Letters, 1989
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profilingApplied Physics Letters, 1983