Some Generalities of the Transit-time Mode for Two-barrier Devices†
- 1 August 1962
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 13 (2) , 137-158
- https://doi.org/10.1080/00207216208937427
Abstract
Active devices having injecting and collecting electrodes, such as thermionic tubes, transistors, metal-interface amplifiers, etc., have some common properties. The propagation of an injected current wave gives rise to negative and positive resistances, inductances and capacitances. In all such devices negative resistances are available not only at low frequencies, but at high frequencies as well. The interfaces displaying those characteristics can be formed of metals, insulators and semiconductors.Keywords
This publication has 4 references indexed in Scilit:
- Alpha cutoff frequency of junction transistorsSolid-State Electronics, 1961
- Transit Time TransistorJournal of Applied Physics, 1956
- LI. Measurements on Alloy-Type Germanium. Transistors and their Relation to TheoryJournal of Electronics and Control, 1956
- Negative Resistance Arising from Transit Time in Semiconductor DiodesBell System Technical Journal, 1954