Chemical effects in ion mixing of a ternary system (metal-SiO2)
- 9 March 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (10) , 571-573
- https://doi.org/10.1063/1.98138
Abstract
The mixing of Ti, Cr, and Ni thin films with SiO2 by low‐temperature (−196–25 °C) irradiation with 290 keV Xe has been investigated. Comparison of the morphology of the intermixed region and the dose dependences of net metal transport into SiO2 reveals that long range motion and phase formation probably occur as separate and sequential processes. Kinetic limitations suppress chemical effects in these systems during the initial transport process. Chemical interactions influence the subsequent phase formation.Keywords
This publication has 10 references indexed in Scilit:
- Ion beam mixing: Basic experimentsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- When is thermodynamics relevant to ion-induced atomic rearrangements in metals?Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Correlation between chemistry and the amount of mixing in bilayers submitted to ion bombardmentJournal of Applied Physics, 1985
- Influence of chemical driving forces in ion mixing of metallic bilayersApplied Physics Letters, 1984
- Ion beam mixing of metal films on SiO2Materials Letters, 1984
- Chemical effects in ion mixing of transition metals on SiO2Nuclear Instruments and Methods in Physics Research, 1983
- Low dose depth distribution of recoil implanted atomsApplied Physics Letters, 1983
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Theoretical aspects of atomic mixing by ion beamsNuclear Instruments and Methods, 1981
- Reaction of thin metal films with SiO2 substratesSolid-State Electronics, 1978