SEM study of etching of GaAs substrates in the H3PO4:H2O2:H2O system
- 30 April 1987
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 18 (2) , 48-51
- https://doi.org/10.1016/s0026-2692(87)80409-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Interface Composition Studies of Thermally Oxidized GaAs Using Auger Depth ProfilingJournal of the Electrochemical Society, 1982
- Auger Electron Spectroscopy Study of GaAs Substrate Cleaning ProceduresJournal of the Electrochemical Society, 1982
- Auger Characterization of Chemically Etched GaAs SurfacesJournal of the Electrochemical Society, 1977