Differences between silicon oxycarbide regions at SiCSiO2 prepared by plasma-assisted oxidation and thermal oxidations
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 435-439
- https://doi.org/10.1016/s0169-4332(97)00469-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfacesMicroelectronic Engineering, 1997
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- Characterization of annealed oxides on n-type 6HSiC by high- and low-frequency CV-measurementsMicroelectronic Engineering, 1995
- ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfacesJournal of Materials Research, 1994
- Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device StructuresJapanese Journal of Applied Physics, 1994
- Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition processApplied Physics Letters, 1992
- Effects of thermal history on stress-related properties of very thin films of thermally grown silicon dioxideJournal of Vacuum Science & Technology B, 1989