Some Characteristics of GaAs–Ge Epitaxy
- 1 October 1966
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (11) , 4295-4296
- https://doi.org/10.1063/1.1708023
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Optical and Electrical Properties of Single-Crystal GaP Vapor-Grown on GaAs SubstrateJournal of Applied Physics, 1964
- The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of SemiconductorsJournal of the Electrochemical Society, 1963
- Behavior of Germanium in Gallium ArsenideJournal of Applied Physics, 1962
- Gaseous Diffusion of Arsenic and Phosphorus into GermaniumJournal of the Electrochemical Society, 1961