Interactions of in atoms with partial dislocations cores in GaAs: 0.3% In
- 1 March 1989
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 59 (3) , 121-129
- https://doi.org/10.1080/09500838908206333
Abstract
It has been established that dislocation mobilities in GaAs are reduced by In doping. This reduction operates mainly on defects exhibiting at least one α (As core) partial dislocation. We discuss here the different interactions between In and α partials which can occur. We propose interstitial In incorporated on dangling bonds as responsible for the observed reduction in mobility. The role of temperature and stress is also discussed.Keywords
This publication has 5 references indexed in Scilit:
- Dislocation velocity measurements in semi-insulating In-doped GaAsPhilosophical Magazine Letters, 1987
- Effects of In impurity on the dynamic behavior of dislocations in GaAsJournal of Applied Physics, 1987
- Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnershipRevue de Physique Appliquée, 1987
- Dynamic characteristics of dislocations in indium-doped gallium arsenide crystalApplied Physics Letters, 1986
- Dislocation Velocities in GaAsJapanese Journal of Applied Physics, 1977