Theory of Charge Transfer in Amorphous-Silicon Charge-Coupled Devices
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8R) , 1056-1060
- https://doi.org/10.1143/jjap.24.1056
Abstract
Charge transfer in amorphous-silicon charge-coupled devices is analyzed, taking the density distribution of residual electrons perpendicular to the insulator/amorphous-silicon interface into account. The high transfer inefficiency obtained experimentally is explained by this thickness effect. When the amorphous-silicon layer is as thin as 10 nm, the transfer inefficiency is predicated to approach 10-4 at clock frequencies of more than 10 kHz.Keywords
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