Wafer-level Jramp and J-constant electromigration testing of conventional and SWEAT patterns assisted by a thermal and electrical simulator
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
For a quick analysis of wafer-level metal electromigration tests, an analytical thermal and electrical simulator was developed for conventional and SWEAT patterns. For the experimental current vs. resistance data, a fitting was made with oxide and metal thermal conductivity as the parameter, and good agreement was obtained between theory and experiment. A theory is created to show that the extrapolated lifetime can be quickly obtained by Jramp stress tests. Reliable values of the activation factor can be obtained by the combined use of several SWEAT patterns in J-constant tests.<>Keywords
This publication has 7 references indexed in Scilit:
- Kinetic study of electromigration failure in Cr/Al-Cu thin film conductors covered with polyimide and the problem of the stress dependent activation energyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Simulation and testing of temperature distribution and resistance versus power for SWEAT and related Joule-heated metal-on-insulator structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new wafer-level isothermal Joule-heated electromigration test for rapid testing of integrated-circuit interconnectJournal of Applied Physics, 1987
- Thermal analysis of electromigration test structuresIEEE Transactions on Electron Devices, 1987
- Reproducibility of electromigration measurementsIEEE Transactions on Electron Devices, 1987
- Breakdown Energy of Metal (BEM) - A New Technique for Monitoring Metallization Reliability at Wafer Level8th Reliability Physics Symposium, 1985
- Wafer Level Electromigration Tests for Production Monitoring8th Reliability Physics Symposium, 1985