Thermal analysis of electromigration test structures
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (3) , 664-672
- https://doi.org/10.1109/t-ed.1987.22978
Abstract
Analytical expressions are derived for estimating the temperature profile along a straight-line resistor test structure due to the joule heating generated by a high current-density stress, such as is used in accelerated stress tests to characterize metallizations for electromigration. It is shown how an improved estimate of the mean metallization stress temperature may be made and how the thickness and thermal conductivity of the underlying electrical insulator affect the temperature profile of the metallization. Recommendations for the design of electromigration test structures are developed that will promote reduced temperature gradients in the metallization during stress testing and improved reproducibility of electromigration characterizations.Keywords
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