Low-threshold continuous-wave surface emitting lasers with etched void confinement
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (3) , 320-322
- https://doi.org/10.1109/68.275477
Abstract
Data are presented demonstrating low threshold continuous wave operation of AlAs/GaAs/InGaAs vertical cavity surface emitting lasers. Continuous wave thresholds of 470 /spl mu/A have been realized for device diameters of /spl sim/4 /spl mu/m, and 1.1 mA for a device diameter of 10 /spl mu/m. A two-step molecular beam epitaxial growth process is used which results in a buried etched void surrounding the active cavity of the laser.Keywords
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