Band offsets in GaSb/AlGaAsSb: Correlation with the Schottky barrier height and the depth of native acceptors
- 30 April 1993
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (4) , 649-651
- https://doi.org/10.1016/0038-1101(93)90279-y
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Schottky barriers of various metals on Al0.5Ga0.5As0.05Sb0.95 and the influence of hydrogen and sulfur treatments on their propertiesJournal of Applied Physics, 1992
- Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky DiodesMaterials Science Forum, 1992
- MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasersJournal of Crystal Growth, 1991
- Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfacesJournal of Vacuum Science & Technology B, 1988
- The advanced unified defect model for Schottky barrier formationJournal of Vacuum Science & Technology B, 1988
- Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applicationsJournal of Applied Physics, 1987
- Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperatureSoviet Journal of Quantum Electronics, 1985
- Heterojunction band discontinuities of quaternary semiconductor alloysSolid State Communications, 1984
- Electrical and Optical Studies in Gallium AntimonideJapanese Journal of Applied Physics, 1981